Texas A&M University; Electrical and Computer Engineering Dept.
(Director)
R. Stanley Williams, one of the initiators of neuromorphic computing, joined Texas A&M in 2019 as Professor of Electrical and Computer Engineering after 23 years at Hewlett Packard. Williams served in various management roles in HP/HPE, included Laboratory Director, Chief Technologist for Sensing Solutions, and most recently, Director of the Rebooting Computing program. He previously served on the BES Advisory Committee.
Research
Williams will help guide the center research vision and link transport phenomena and material properties. His resaerch contributions include experimental realization of memristor behavior and the science of negative differential resistance.
Publications
- Sreetosh Goswami, R. Pramanick, A. Patra, S. P. Rath, M. Foltin, A. Ariando, D. Thompson, T. Venkatesan, Sreebrata Goswami , R. S. Williams,* Decision trees within a molecular memristor. Nature 2021, 597, 51-56. doi: 10.1038/s41586-021-03748-0J
- S. Kumar, R. S. Williams* and Z. Wang, Third-Order Nano-Circuit Elements for Neuromorphic Engineering. Nature 2020, 583, 518-523. doi:10.1038/s41586-020-2735-5
- L. Andrews, D. A. Santos, M. Meyyappan, R. S. Williams and S. Banerjee, Building brain-inspired logic circuits from dynamically switchable transition-metal oxides. Trends in Chemistry 2019, 1, 711-726. doi: 10.1016/j.trechm.2019.07.005
- M. D. Pickett, G. Medeiros-Ribeiro and R. S. Williams,* A scalable neuristor built with Mott memristors. Nature Materials 2013, 12, 114-117. doi: 10.1038/nmat3510
- D. Strukov, G. S. Snider, D. R. Stewart and R. S. Williams,* The Missing Memristor Found. Nature 2008, 453, 80-83. doi: 10.1038/nature06932